The 3rd generation SiC SBD chip from VAST SEMI, utilizing a new Schottky metal, features an industry-leading low forward voltage. This generation optimizes the trade-offs between forward voltage and total capacitive charge, as well as between forward voltage and reverse current. These improvements reduce power consumption and enhance device efficiency.
| Inquiry | Datasheet | Part Number | BVDSS | IC | Package |
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| （V） | （A） |
